Who We Are
The formation of 2D materials at the single- and few-layer level is very challenging and requires basic knowledge of the processes taking place during growth. Moreover, their controlled formation on large-scales is a prerequisite for the successful integration of 2D materials in new and existing technologies. In order to address this important issue, we use chemical vapor deposition (CVD) methodologies for the growth of transition metal dichalcogenides (TMDs), mainly of the Mo and W families (MoX2 and WX2; X = S, Se and Te). Some basic questions we are trying to address: what's the influence of the surface on the growth? What's the influence of the precursor type (solid, liquid and gas – volatile or not, etc.)? What are the requirements to grow a single-layer over large-areas (surface-mediated growth, layer-by-layer, 3D islands growth, etc.)? Furthermore, we are targeting the growth of more exotic layered materials not explored so far.
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