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COVER_Hg removal.tif

Engineering the Performance and Stability of Molybdenum Disulfide for Heavy Metal Removal

ACS Appl. Mater. Interfaces 2023, 15, 5, 6603–6611

 

Eilom Saias, Ariel Ismach and Ines Zucker

Nature mat 2023.jpg

Spin-valley Rashba monolayer laser

Nature Materials (2023)

Kexiu Rong, Xiaoyang Duan, Bo Wang, Dror Reichenberg, Assael Cohen, Chieh-li Liu, Pranab K Mohapatra, Avinash Patsha, Vladi Gorovoy, Subhrajit Mukherjee, Vladimir Kleiner, Ariel Ismach, Elad Koren, Erez Hasman

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Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire

ACS Nano 2023, 17, 6, 5399–5411

Assael Cohen, Pranab K. Mohapatra, Simon Hettler, Avinash Patsha, K. V. L. V. Narayanachari, Pini Shekhter, John Cavin, James M. Rondinelli, Michael Bedzyk, Oswaldo Dieguez, Raul Arenal, and Ariel Ismach

edge....elad koren AMI 2023.TIFF

Edge-Based Two-Dimensional α-In2Se3– MoS2 Ferroelectric Field Effect Device

ACS Appl. Mater. Interfaces 2023, 15, 14, 18505–18515

 

Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Pranab K Mohapatra, Ariel Ismach, Elad Koren

PRB 2023.jpg

Twist-induced interlayer charge buildup in a WS2 bilayer revealed by electron Compton scattering
and density functional theory

PHYSICAL REVIEW B 107, 235424 (2023)

A. Talmantaite, Y. Xie, A. Cohen, P. K. Mohapatra, A. Ismach, T. Mizoguchi, S. J. Clark, and B. G. Mendis

Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs

Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature

Materials Horizons, 2022,9, 1089-1098

 

S. Katznelson, B. Cohn, S. Sufrin, T. Amit, S. Mukherjee, V. Kleiner, P.K. Mohapatra, A. Patsha, A. Ismach, S. Refaely-Abramson, E. Hasman, E. Koren 

Halide chemical vapor deposition of 2D semiconducting atomically-thin crystals From self-s

Halide Chemical Vapor Deposition of 2D Semiconducting Atomically-Thin Crystals: From Self-Seeded to Epitaxial Growth

Applied Materials Today, 2022, 26, 101379

 

A. Patsha, K. Ranganathan, M. Kazes, D. Oron and A. Ismach

Modulating the Optoelectronic Properties of MoS2 by Highly Oriented Dipole-Generating Mono

Modulating the Optoelectronic Properties of MoS2 by Highly Oriented Dipole-Generating Monolayers

ACS Applied Materials & Interfaces, 2021, 13 (27), 32590-32597

 

AR Brill, A Kafri, P.K. Mohapatra, A Ismach, G de Ruiter, E Koren

Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Usin

Maskless Device Fabrication and Laser-Induced Doping in MoS2 Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist

ACS Appl. Mater. Interfaces 2021, 13, 4, 5399–5405

 

S. Mukherjee, D. Dutta, P. K. Mohapatra, L. Dezanashvili, A., E. Koren

Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers.tif

Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers

ACS Nano 2021, 15, 1, 526–538

A. Cohen, A. Patsha, P.K. Mohapatra, M. Kazes, K. Ranganathan, D. Oron and A. Ismach

Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2S

Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3

ACS Nano 2020, 14, 12, 17543–17553

S. Mukherjee, D. Dutta, P. K. Mohapatra, L. Dezanashvili, A., E. Koren

Selective Area Growth and Transfer of High Optical Quality MoS2 Layers.tif

Selective Area Growth and Transfer of High Optical Quality MoS2 Monolayers

Advanced Materials Interfaces, 2020, 2001549

P. Mohapatra,* K. Ranganathan,* and A. Ismach

Catalytic HER Enhancement on Vertically Aligned MoS2 by Synergistic Addition of Silver and Palladium

ChemElectroChem 2020, 7, 4224

I. Gerlitz, M. Feingenbaum,* M. Bar-Sadan, H. Cohen,  A. Ismach and B. Rosen

Large-Scale and Robust Multifunctional Vertically Aligned MoS2 Photo-Memristors.tif

Large-Scale and Robust Multifunctional Vertically-Aligned MoS2 Photo-Memristors

Advanced Functional Materials, 2020, 2005718

K. Ranganathan, M. Feingenbaum and A. Ismach

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Epitaxial Growth of In2Se3 on Monolayer MoS2 Single Crystals for High Performance Photodetectors

Applied Materials Today, 2020, 100734

P. Mohapatra, L. Denzenshvilli, K. Ranganathan, L. Houben and A. Ismach

Large-Scale characterization of Two-Dimensional Monolayer MoS2 Island Domains Using Spectr

Large-Scale Characterization of Two-Dimensional Monolayer MoS2 Island Domains using Spectroscopic Ellipsometry and Reflectometry 

Applied Surface Science, 2020, 524, 146418

O. Luria, P. Mohapatra, A. Kribus and A. Ismach

Light-and-complex-3D-MoS-2graphene-heterostructures-as-efficient-catalysts-for-the-hydroge

Light and Complex 3D MoS2/graphene Heterostructures as an Efficient Catalyst for the Hydrogen Evolution Reaction

Nanoscale, 2020, 12, 2715-2725

Jonah Teich, Ravit Dvir, Alex Henning, Eliran Hemo, Michael J. Moody, Titel Jurca, Hagai Cohen, Tobin Marks, Brian Rosen, Lincoln Lauhon and Ariel Ismach

Seeded-Growth of WS2 Atomic Layers The Effect on Chemical and Optical Properties.tif

Seeded-Growth of WS2 Atomic layers: The Effect on Chemical and Optical Properties

Nanoscale, 2019,11, 22493-22503

A. Patsha, V. Sheff and A. Ismach

Tuning the morphology and chemical composition of MoS2 nanostructures.tif

Tuning the Morphology and Chemical Composition of MoS2 Nanostructures

Journal of Materials Science, 2019, 54, 7768-7779.

G. Radovsky, T. Shalev and A. Ismach

MoS2 cleaning by acetone and UV-Ozone Geological and synthetic material

MoS2 cleaning by acetone and UV-Ozone: Geological and synthetic material

Applied Surface science, 2019, 478, 183-188.

Keren M. Freedy, Maria Gabriela Sales, Peter M. Litwin, Sergiy Krylyuk, Pranab Mohapatra, Ariel Ismach, Albert V. Davydov, and Stephen J. McDonnell

Flatlands in the Holy Land The Evolution of Layered Materials Research in Israel.tif

Flatlands in the Holy Land: The Evolution of Layered Materials Research in Israel

Advanced Materials, 2018, 1706581

O. Hod, M. Urbakh, D. Naveh, M. Bar-Sadan and A. Ismach

Carbon-assisted chemical vapor deposition of hexagonal boron nitride.tif

Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials, 2017, 4, 025117  

A. Ismach, H. Chou, P. Mende, A. Dolocan, R.  Addou, S.  Aloni, R. Wallace, R. Feenstra, RS. Ruoff, L. Colombo

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microsc

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

Surface Science, 2017, 659, 31-42 

P. Mende, Q. Gao, A. Ismach, H. Chou, M. Widom, RS. Ruoff, L. Colombo, R. Feenstra

Revealing the planar chemistry of two dimensional heterostructures at atomic level.tif

Revealing the Planar Chemistry of Two-Dimensional Heterostructures at Atomic Level

Nature Communications, 2015, 6, 7482

H. Chou, A. Ismach, R. Ghosh, R.S. Ruoff and A. Dolocan

Mesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique

Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique

Nano Letters, 2014, 14(8), 4682-4686 

Y. Liu, R. Ghosh, D. Wu, A. Ismach, R.S. Ruoff and K. Lai

Synthesis and characterization of 2D layered materials The case of hexagonal boron nitride

Synthesis and Characterization of 2D Layered Materials: The Case of Hexagonal Boron Nitride

IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2014, Pages: 898-899

A. Ismach

Formation of Ordered vs. Disordered Carbon Nanotube Serpentines on Anisotropic vs. Isotropic Substra

Formation of Ordered vs. Disordered Carbon Nanotube Serpentines on Anisotropic vs. Isotropic Substrates

Journal of Physical Chemistry C, 2014, 118 (25), 14044–14050

N. Shadmi N., N. Geblinger, A. Ismach and E. Joselevich

Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates

Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates

ACS Nano, 2013, 7(9), 7495-7499

R. Piner, H. Li, X. Kong, L. Tao, H. Ji, W. H. Lee, J. W. Suk1, J. Ye, Y. Hao, C.W. Magnuson, A. Ismach, D. Akinwande and R.S. Ruoff

Non-destructive and Rapid Evaluation of CVD Graphene by Dark Field Optical Microscopy

Applied Physics Letters, 2013, 103, 043119

X. Kong, H. Ji, R. D. Piner, H. Li, C. W. Magnuson, C. Tan, A. Ismach, H. Chou and R. S. Ruoff

Progress, challenges, and opportunities in two dimentional

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

ACS Nano, 2013, 7 (4), 2898–2926

S. Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger

Fermi velocity engineering in graphene by substrate modification

Fermi velocity engineering in graphene by substrate modification

Scientific Reports 2, 590. DOI:10.1038/srep00590 

C. Hwang, D. Siegel, A. Ismach, S.K. Mo, Y. Zhang and A. Lanzara

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

Towards the Controlled Synthesis of hexagonal Boron Nitride Films

ACS Nano, 2012, 6 (7), 6378–6385  

(Highlights in Nanotechweb)

A. Ismach, H. Chou, D. Ferrer, Y. Wu, H.C. Floresca, S. McDonnell, A. Covacevich, C. Pope, R. Piner, R.  Wallace, M. Kim, L. Colombo, R. Ruoff

Graphene_Si multilayer structure anodes for advanced half and full lithium-ion cells

Graphene/Silicon Multilayer Structures for Enhanced Lithium Storage 

Nano Energy 2012, 1 (1), 164-171 

* These authors contributed equally to this work

L. Ji, A. Ismach, H. Zheng*, Z. Tan*, S. Xun, E. Lin, V. Battaglia, and Y. Zhang

Hyperspectral Nanoscale Imaging on Dielectric Substrates with Coaxial Optical Antenna Scan

Hyperspectral Nanoscale Imaging on Dielectric Substrates with Coaxial Optical Antenna Scan Probes 

Nano Letters 2011, 11 (3), 1201–1207

A. Weber-Bargioni, A. Schwartzberg, M. Cornaglia, A. Ismach, J.J. Urban, Y. Pang, R. Gordon, D. F. Ogletree, S. Cabrini, P. J. Schuck

Modulating the Electronic Properties Along Carbon Nanotubes via Tube-Substrate Interaction

Modulating the Electronic Properties Along Carbon Nanotubes via Tube-Substrate Interaction 

Nano Letters 2010, 10 (12), 5043–5048  

J. Soares, A. P. Barboza, P. Araujo, N. B. Neto, D. Nakabayashi, N. Shadmi, T. Yarden, A. Ismach, N. Geblinger, E. Joselevich, C. Vilani, L. Cançado, L. Novotny, G. Dresselhaus, M. S. Dresselhaus, B. R. A. Neves, M. S. C. Mazzoni, A. Jorio.

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabri

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography 

Nano Letters 2010, 10, 2454–2460

X. Liang, Y. Jung, S. Wu, A. Ismach, D.L. Olynick, S. Cabrini, and J. Bokor

Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces

Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces. 

Nano Letters 2010, 10, 1542-1548 

One of the top 20 most accessed articles in Nano Letters during 2010.

A. Ismach, C. Druzgalski, S. Penwell, M. Zheng, A. Javey, J. Bokor, Y. Zhang

Roller-style electrostatic printing of prepatterned few-layer-graphenes

Roller-Style Electrostatic Printing of Prepatterned Few-Layer-Graphenes 

Applied Physics Letters 2010, 96, 0131091-0131093 

X. Liang, V. Giacometti, A. Ismach, B.D. Harteneck, D.L. Olynick, and S. Cabrini

Mechanism of Near-Field Raman Enhancement in One-Dimensional Systems

Mechanism of Near-Field Raman Enhancement in One-Dimensional Systems 

Physical Review Letters 2009, 106, 186101-186104 

L.G Cancado, A. Jorio, A. Ismach, E. Joselevich, A. Hartschuh, L. Novotny 

Self organized nanotube serpentines.tif

Self-Organized Nanotube Serpentines 

Nature Nanotechnology 2008, 3, 195-200 

(Cover of Nature Nanotechnology) * These authors contributed equally to this work.

N. Geblinger*, A. Ismach* and E. Joselevich.

Nanofacet Lithography: A New Bottom-Up Approach to Nanopatterning and Nanofabrication by Soft Replic

Nanofacet Lithography: A New Bottom-Up Approach to Nanopatterning and Nanofabrication by Soft Replication of Spontaneously Faceted Crystal Surfaces 

Advanced Materials 2006, 19, 1325-1330

R. Gabai, A. Ismach and E. Joselevich

Orthogonal Self-Assembly of Carbon Nanotube Crossbar Architectures by Simultaneous Graphoe

Orthogonal Self-Assembly of Carbon Nanotube Crossbar Architectures by Simultaneous Graphoepitaxy and Electric Field-Directed Growth 

 Nano Letters 2006, 6, 1706-1710

A. Ismach and E. Joselevich. 

Carbon Nanotube Graphoepitaxy

Carbon Nanotube Graphoepitaxy: Highly Oriented Growth by Faceted Nanosteps 

Journal of the American Chemical Society 2005, 127, 11554-11555 

A. Ismach, D. Kantorovich and E. Joselevich. 

Atomic Step-Templated Assembly of Single-Wall Carbon Nanotube Patterns

Atomic Step-Templated Assembly of Single-Wall Carbon Nanotube Patterns

Angewandte Chemie International Edition, 2004, 43, 6140-6143 

(Cover of Angewandte Chemie, November 17th; Press release by Angew. Chem.; Highlights in Chemistry World and Small)

A. Ismach, L. Segev, E. Wachtel & E. Joselevich. 

Single- and double-resonance Raman

Single- and double-resonance Raman G-band process in carbon nanotubes 

Physical Review B, 2004, 69, 241403-241407

M. Souza, A. Jorio, C. Fantini, B. R. A. Neves, M. A. Pimenta, R. Saito, A. Ismach, E. Joselevich, V. W. Brar, Ge. G. Samsonidze, G. Dresselhaus and M. S. Dresselhaus.

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