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Welcome to the 2D Materials lab
at Tel Aviv University!

We are interested in studying the growth of different 2D atomic-films (like graphene, transition metal dichalcogenides, hexagonal boron nitride, etc.). We believe that revealing the growth mechanism of such materials will enable the controlled growth of atomic films with the desired phase, number of layers, chemical composition (alloys and dopants) and thus, dictate the electrical, optical and chemical properties. Therefore, the group's research is dedicated to the rational growth of atomic-films and to explore the structure (phase, number of layers, chemical composition, stacking registry, etc.) – property (electrical, optical, etc.) 


The 2D Materials Lab is equipped with state of the art chemical vapor deposition systems and characterization tools, such as Micro-Raman, electrical measurement systems, etc.


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Growth mechanism studies

The formation of 2D materials at the single- and few-layer level is very challenging and requires basic knowledge of the processes taking place during growth. Moreover, their controlled formation on large-scales is a prerequisite for the successful integration of 2D materials in new and existing technologies. In order to address this important issue, we use chemical vapor deposition (CVD) methodologies for the growth of transition metal dichalcogenides (TMDs), mainly of the Mo and W families (MoX2 and WX2; X = S, Se and Te). Some basic questions we are trying to address: what's the influence of the surface on the growth? What's the influence of the precursor type (solid, liquid and gas – volatile or not, etc.)? What are the requirements to grow a single-layer over large-areas (surface-mediated growth, layer-by-layer, 3D islands growth, etc.)? Furthermore, we are targeting the growth of more exotic layered materials not explored so far.

Latest Publications

Thermally Stable, Three-Dimensional Membrane Composed of Graphene

      Nanoparticle-Biocomposite for Photothermal Applications In Review

E. Hauzer, R. Sapir, Y. Flitsanov, A. Kribus, A. Ismach and S. Richter

The Team

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